دیتاشیت FDS89161
مشخصات دیتاشیت
| نام دیتاشیت |
FDS89161
|
| حجم فایل |
405.312
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
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Type:
2 N-Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FDS89161
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
1.6W
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Total Gate Charge (Qg@Vgs):
4.1nC@10V
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Drain Source Voltage (Vdss):
100V
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Input Capacitance (Ciss@Vds):
210pF@50V
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Continuous Drain Current (Id):
2.7A
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Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
105mΩ@2.7A,10V
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Package:
SOP-8
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Manufacturer:
onsemi
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Series:
PowerTrench®
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
2 N-Channel (Dual)
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FET Feature:
Standard
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Drain to Source Voltage (Vdss):
100V
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Current - Continuous Drain (Id) @ 25°C:
2.7A
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Rds On (Max) @ Id, Vgs:
105mOhm @ 2.7A, 10V
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Vgs(th) (Max) @ Id:
4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
4.1nC @ 10V
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Input Capacitance (Ciss) (Max) @ Vds:
210pF @ 50V
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Power - Max:
1.6W
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Mounting Type:
Surface Mount
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Package / Case:
8-SOIC (0.154", 3.90mm Width)
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Supplier Device Package:
8-SOIC
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Base Part Number:
FDS89
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detail:
Mosfet Array 2 N-Channel (Dual) 100V 2.7A 1.6W Surface Mount 8-SOIC
